Gate Dielectrics
Assisting in the characterization and development of thin film gate dielectric stacks that form the basis of new transistor development.
The development of next generation gate dielectric materials is endeavoring to keep pace with the demand for continued transistor dimension reduction. Reduction in transistor dimensions is in line with the increased demand for superior mobile computing and communication devices; in turn requiring faster processing speed and decreased power consumption.
The demand for miniaturization is driving a technology transfer from gates based on Si oxide to High-K solutions utilizing exotic metal oxide combinations including Hf and Zr. With the typical dimension of the total gate stack being 3-4 nanometers; complete characterization of these devices is not without its challenges.
The Thermo Scientific range of XPS spectrometers delivers a unique combination of thickness and quantitative chemical information within a single measurement. The inclusion of wafer handling tools within the product line portfolio makes XPS the ideal technique for next generation, high-k material selection as well as production control monitoring.
For thin film characterization, hawse offer a number of products and services that meet the requirements of scientists and engineers involved with both research development and failure analysis.
